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CGHV60170D

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CGHV60170D

Transistor Polarity : N-Channel

Technology : GaN

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 18 dB

Transistor Type : HEMT

Output Power : 170 W

Package / Case : Bare Die

Maximum Operating Temperature : -

Vds - Drain-Source Breakdown Voltage : 50 V

Packaging : Gel Pack

Maximum Drain Gate Voltage : -

Id - Continuous Drain Current : 12.6 A

Vgs - Gate-Source Breakdown Voltage : -

Pd - Power Dissipation : -

Manufacturer : Wolfspeed / Cree

Description : RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt

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The CGHV60170D,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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