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Transistor Polarity : N-Channel
Technology : GaN
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 18 dB
Transistor Type : HEMT
Output Power : 170 W
Package / Case : Bare Die
Maximum Operating Temperature : -
Vds - Drain-Source Breakdown Voltage : 50 V
Packaging : Gel Pack
Maximum Drain Gate Voltage : -
Id - Continuous Drain Current : 12.6 A
Vgs - Gate-Source Breakdown Voltage : -
Pd - Power Dissipation : -
Manufacturer : Wolfspeed / Cree
Description : RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
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