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CGHV14250F

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Shenzhen Chive Electronics Co., Ltd.

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CGHV14250F

Transistor Polarity : N-Channel

Technology : GaN

Product Category : RF JFET Transistors

Mounting Style : Screw

Gain : 18.6 dB

Transistor Type : HEMT

Output Power : 330 W

Package / Case : 440162

Maximum Operating Temperature : + 130 C

Vds - Drain-Source Breakdown Voltage : 150 V

Packaging : Tube

Maximum Drain Gate Voltage : -

Id - Continuous Drain Current : 18 A

Vgs - Gate-Source Breakdown Voltage : - 10 V to + 2 V

Pd - Power Dissipation : -

Manufacturer : Wolfspeed / Cree

Description : RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt

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The CGHV14250F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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